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SD75120H

STMC
Part Number SD75120H
Manufacturer STMC
Description FAST RECOVER EPITAXIAL DIODE
Published Feb 13, 2020
Detailed Description SD75120H（TO247-2L） 1200V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE （FRED） Features  Planar passivated chips ...
Datasheet PDF File SD75120H PDF File

SD75120H
SD75120H


Overview
SD75120H（TO247-2L） 1200V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE （FRED） Features  Planar passivated chips  Very short recovery time  Extremely low switching losses  Low IRM values  Soft recovery behaviour  100% avalanche tested Applications  Antiparallel diode for high frequency switching devices  Anti saturation diode  Snubber diode  Free wheeling diode in converters and motor control circuits  Rectifiers in switch mode power supplies (SMPS)  Inductive heating and melting  Uninterruptible power supplies (UPS)  Ultrasonic cleaners and welders VRRM = 1200 V IFAVM = 75 A VF（typ）=2.
0V（IF=75A,TVJ=25℃） trr < 90 ns（IF = 1 A; di/dt = 200 A/s） Package TO247-2L Absolute Maximum Ratings Symbol Parameter VRRM IF(AV) IFRM IFSM TJ TSTG Peak Repetitive Reverse Voltage Diode Continuous Forward Current ( TC=100 ℃) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Operating Junction Temperature Range Storage Temperature Range Value 1200 75 150 750 -55 to +150 -55 to +150 Units V A A A ℃ ℃ ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) Symbol VR VF IRM Parameter Test Conditions Min.
Cathode to Anode Breakdown Voltage IR = 100µA 1200 Diode Forward Voltage Diode Forward Voltage IF=75A TC=25℃ IF=75A TC=125℃ Maximum Reverse Leakage Current VR=1200V TC=25℃ VR=1200V TC=125℃ Typ.
Max.
Units 2.
0 2.
7 1.
8 2.
5 10 100 V V µA µA No.
1 Total 2 www.
sitech.
cc st_market@163.
com SD75120H（TO247-2L） 1200V FRED DISCRETE DEVICE DYNAMIC RECOVERY CHARACTERISTICS(TJ = 25 °C unless otherwise specified) Symbol IRRM Qrr trr S IRRM Qrr trr S Parameter Diode Peak Reverse Recovery Current Reverse recovery charge (Area Under the Curve Defined by IRRM and trr).
Diode Reverse Recovery Time S= tb/ta Diode Peak Reverse Recovery Current Reverse recovery charge (Area Under the Curve Defined by IRRM and trr).
Diode Reverse Recovery Time S= tb/ta Test Conditions VDD=100V;IF=1A; dif/dt=200A...


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