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RUH4040M2

Ruichips
Part Number RUH4040M2
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Feb 13, 2020
Detailed Description RUH4040M2 N-Channel Advanced Power MOSFET Features • 40V/40A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V RDS (ON) =8mΩ(Typ.)@VGS=4.5...
Datasheet PDF File RUH4040M2 PDF File

RUH4040M2
RUH4040M2

Overview
RUH4040M2 N-Channel Advanced Power MOSFET Features • 40V/40A, RDS (ON) =5.
5mΩ(Typ.
)@VGS=10V RDS (ON) =8mΩ(Typ.
)@VGS=4.
5V • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC/DC Converters • On board power for server • Synchronous rectification Pin Description D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA③ S N-Channel MOSFET Rating Unit TC=25°C 40 ±20 150 -55 to 150 40 V °C °C A TC=25°C 160 A TC=25°C 40 TC=100°C 25 A TA=25°C 18 TA=70°C 14 TC=25°C 34 TC=100°C 13 W TA=25°C 4.
2 TA=70°C 2.
7 Shenzhen City Ruichips Semiconductor Co.
, Ltd Rev.
A– MAY.
, 2017 1 www.
ruichips.
com RUH4040M2 Symbol Parameter Rating Unit RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings 3.
72 30 EAS④ Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) 42 Symbol Parameter Test Condition RUH4040M2 Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±20V, VDS=0V RDS(ON)⑤ Drain-Source On-state Resistance VGS=4.
5V, IDS=30A VGS=10V, IDS=40A 40 1 30 12 ±100 8 11 5.
5 6.
5 Diode Characteristics VSD⑤ trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=40A, VGS=0V ISD=40A, dlSD/dt=100A/µs 1.
2 9 15 Dynamic Char...


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