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3429DE

CXW
Part Number 3429DE
Manufacturer CXW
Description Dual P-Channel MOSFET
Published Feb 13, 2020
Detailed Description Dual P-channelEnhancementMode MOSFET DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and...
Datasheet PDF File 3429DE PDF File

3429DE
3429DE


Overview
Dual P-channelEnhancementMode MOSFET DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES ● VDS ● ID ● RDS(ON)( at VGS=-4.
5V) ● RDS(ON)( at VGS=-2.
5V) ● RDS(ON)( at VGS=-1.
8V) -20V -30A ＜19 mohm ＜26 mohm ＜45 mohm ● Trench Power LV MOSFET technology ● High density cell design for Low RDS(ON) ● High Speed switching Application  PWM applications  Load switch  Power management 3429DE DATASHEET (8) (7) D1 D1 (6) (5) D2 D2 (2) (4) G1 G2 S1 S2 (1) (3) P-Channel MOSFET DFN3333 ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TC=25℃ TC=100℃ Total Power Dissipation TC=25℃ TC=100℃ Single Pulse Avalanche Energy B Thermal Resistance Junction-to-Case C Junction and Storage Temperature Range VDS VGS ID IDM PD EAS RθJC TJ ,TSTG 1/5 Limit -20 ±10 -30 -19 -40 32 12.
8 31 3.
9 -55～+155 Unit V V A A W W mJ ℃/ W ℃ Dual P-channelEnhancementMode MOSFET 3429DE DATASHEET ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage Maximum Body-Diode Continuous Current Dynamic Parameters VSD IS VGS= 0V, ID=-250μA VDS=-20V,VGS=0V,TC=25℃ VGS= ±10V, VDS=0V VDS= VGS, ID=-250μA VGS= -4.
5V, ID=-15A VGS= -2.
5V, ID=-8A VGS= -1.
8V, ID=-6A IS=-30A,VGS=0V -20 V -1 μA ±100 nA -0.
4 -0.
62 -1.
0 V 15.
5 19 21 26 mΩ 30 45 -0.
8 -1.
2 V -30 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Parameters Ciss Coss Crss VDS=-10V,VGS=0V,f=1MHZ 2050 411 362 pF Total Gate Charge Gate Source Charge Gate Drain Charge Turn-on Delay Time Turn-on Ri...


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