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RU1Z120R3

Ruichips
Part Number RU1Z120R3
Manufacturer Ruichips
Description N-Channel MOSFET
Published Feb 13, 2020
Detailed Description RU1Z120R3 N-Channel Advanced Power MOSFET Features • 150V/120A RDS (ON) =11mΩ(Typ.)@VGS=10V • Insulation Slug(VISO≥1500...
Datasheet PDF File RU1Z120R3 PDF File

RU1Z120R3
RU1Z120R3

Overview
RU1Z120R3 N-Channel Advanced Power MOSFET Features • 150V/120A RDS (ON) =11mΩ(Typ.
)@VGS=10V • Insulation Slug(VISO≥1500VAC) • Reliable and Rugged • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) Applications • High Efficiency Synchronous Rectification in SMPS • High Speed Power Switching • Automotive applications and a wide variety of other applications Pin Description Insulation Slug SDG TO220S D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 150 ±25 175 -55 to 175 120 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480 A 120 A 85 375 W 188 0.
4 °C/W 62.
5 °C/W 552 mJ Ruichips Semiconductor Co.
, Ltd Rev.
B– AUG.
, 2015 1 www.
ruichips.
com RU1Z120R3 Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1Z120R3 Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±25V, VDS=0V RDS(ON)④ Drain-Source On-state Resistance VGS=10V, IDS=60A Diode Characteristics 150 1 30 2.
5 3.
3 4.
5 ±100 11 15 VSD④ trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=60A, VGS=0V ISD=60A, dlSD/dt=100A/µs 1.
2 56 102 Dynamic Characteristics⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Tra...


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