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4435

CXW
Part Number 4435
Manufacturer CXW
Description P-Channel MOSFET
Published Feb 13, 2020
Detailed Description  P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON) ...
Datasheet PDF File 4435 PDF File

4435
4435

Overview
 P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.
  This  device  is  suitable  for  use  as  a  load  switch  or  in    PWM  applications.
    GENERAL FEATURES   RDS(ON) <  RDS(ON) <  Ω @ Ω @       High Power and current handing capability   Lead free product is acquired   Surface Mount Package     Application   PWM applications   Load switch   Power management    4435 DATASHEET 3424   D G S S1 S2 S3 G4    8 D 7D 6D 5D Marking and pin assignment   ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)  Parameter Drain-source Voltage Gate-source Voltage Drain Current TA=25℃ @ Steady State TA=70℃ @ Steady State   Pulsed Drain Current A     Total Power Dissipation @ TA=25℃   Thermal Resistance Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ ,TSTG Maximum -30 ±20 -10 -8 -50 3.
0 42 -55～+150 Unit V V A A W ℃/ W ℃                              1                             P-channel Enhancement Mode MOSFET         ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)  4435 DATASHEET 3424 Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage BVDSS IDSS IGSS VGS(th) RDS(ON) VSD VGS= 0V, ID=-250μA VDS=-30V,VGS=0V,TC=25℃ VGS= ±20V, VDS=0V VDS= VGS, ID=-250μA VGS= -10V, ID=-10A VGS= -4.
5V, ID=-5.
0A IS=-10A,VGS=0V -30 V -1 μA ±100 nA -1.
0 -1.
5 -2.
5 V 16 18 21.
5 26 mΩ -0.
8 -1.
2 V Maximum Body-Diode Continuous Current Dynamic Parameters IS -10 A Input Capacitance Ciss 1500 Output Capacitance Reverse Transfer Capacitance Coss VDS=-15V,VGS=0V,f=1MHZ Crss 327 pF 276 Switching Parameters Total Gate Charge Qg 30 Gate Source Charge Qgs VGS=-10V,VDS=-15V,ID=-9.
1A 5.
3 nC Gate Drain ...


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