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1N40-CB

UTC
Part Number 1N40-CB
Manufacturer UTC
Description 400V N-CHANNEL POWER MOSFET
Published Feb 17, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 1N40-CB Preliminary Power MOSFET 1.0A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The ...
Datasheet PDF File 1N40-CB PDF File

1N40-CB
1N40-CB

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 1N40-CB Preliminary Power MOSFET 1.
0A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N40 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology.
This technology specializes in allowing a minimum on-state resistance and superior switching performance.
It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 1N40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply.
 FEATURES * RDS(ON) < 4.
0Ω @ VGS = 10V, ID = 0.
5A * High Switching Speed * 100% Avalanche Tested  SYMBOL 2.
Drain 11 TO-220F TO-251 1 SOT-223 1 TO-252 1 TO-92 1.
Gate 3.
Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 1N40G-AA3-R 1N40L-TF3-T 1N40G-TF3-T 1N40L-TM3-T 1N40G-TM3-T 1N40L-TN3-R 1N40G-TN3-R 1N40L-T92-B 1N40G-T92-B 1N40L-T92-K 1N40G-T92-K Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-220F TO-251 TO-252 TO-92 TO-92 Pin Assignment 123 GD S GD S GD S GD S GD S GD S Packing Tape Reel Tube Tube Tape Reel Tape Box Bulk www.
unisonic.
com.
tw Copyright © 2016 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R205-186 .
a 1N40-CB  MARKING Package SOT-223 TO-220F / TO-251 / TO-252 TO-92 Preliminary Marking Power MOSFET UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 7 QW-R205-186 .
a 1N40-CB Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage Drain Current (TC=25°C) Avalanche Current (Note 2) Continuous Pulsed (Note 2) VGSS ID IDM IAR ±30 1 4 1.
5 V A A A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 15 mJ 5 V/ns TO-223 1W Power Dissipation (TC=25°C) TO-220F TO-251/TO-252 PD 15 W 25 W TO-92 1W Junction Temperature TJ +150 °C Storage Temp...


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