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RD04LUS2

Mitsubishi
Part Number RD04LUS2
Manufacturer Mitsubishi
Description Silicon RF Power MOSFET
Published Feb 18, 2020
Detailed Description < Silicon RF Power MOS FET (Discrete) > RD04LUS2 RoHS Compliance, Silicon MOSFET Power Transistor,527MHz,4W,3.6V DESCRI...
Datasheet PDF File RD04LUS2 PDF File

RD04LUS2
RD04LUS2

Overview
< Silicon RF Power MOS FET (Discrete) > RD04LUS2 RoHS Compliance, Silicon MOSFET Power Transistor,527MHz,4W,3.
6V DESCRIPTION RD04LUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
FEATURES High power gain and High Efficiency.
Pout=4Wtyp, Drain Effi.
=65%typ @ Vds=3.
6V, Idq=280mA, Pin=0.
4W, f=527MHz Integrated gate protection diode.
OUTLINE DRAWING APPLICATION For output stage of high power amplifiers in VHF/UHF-band mobile radio sets.
RoHS COMPLIANT RD04LUS2-501, T512, T514 is EU RoHS compliant.
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS VDSS Drain to source voltage VGS=0V 25 VGSS Gate to source voltage VDS=0V -5/+10 Pch* Channel dissipation Tc=25°C 46 Pin Input Power Zg=Zl=50 0.
8 Pout Output Power Zg=Zl=50 7 ID Drain Current - 3.
0 Tch Junction Temperature - 150 Tstg Storage temperature - -40 to +125 Note: Above parameters are guaranteed independently.
* Theoretical value in case of mounted on infinite heat sink.
UNIT V V W W W A °C °C Publication Date : Jun．2019 1 < Silicon RF Power MOS FET (Discrete) > RD04LUS2 RoHS Compliance,Silicon MOSFET Power Transistor,527MHz,4W,3.
6V ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS MIN TYP MAX.
IDSS Drain cutoff current VDS=17V, VGS=0V - - 50 IGSS Gate cutoff current VGS=5V, VDS=0V -- 1 VTH Gate threshold Voltage VDS=3.
6V, IDS=1mA 0.
5 1 1.
5 Pout Output power D Drain efficiency f=527MHz ,VDS=3.
6V Pin=0.
4W,Idq=280mA 4* 3.
6* (4.
5**) 60* 56* (65**) - VSWRT Load VSWR tolerance VDS=4.
2V,Po=4W(Pin Control) f=135MHz,Idq=280mA,Zg=50 Load VSWR=20:1(All Phase) No destroy Note: Above parameters, ratings, limits and conditions are subject to change.
* In Mitsubishi 527MHz Test fixture of clamping mechanism.
** In Mitsubishi 527MHz Evaluation Board.
UNIT uA uA V W % - TEMPERATURE CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE N...


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