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TLC2201-SP

Texas Instruments
Part Number TLC2201-SP
Manufacturer Texas Instruments
Description LOW NOISE PRECISION OPERATIONAL AMPLIFIER
Published Feb 21, 2020
Detailed Description TLC2201-SP www.ti.com SLOS710 – FEBRUARY 2011 CLASS V, ADVANCED LinCMOS™ LOW NOISE PRECISION OPERATIONAL AMPLIFIER C...
Datasheet PDF File TLC2201-SP PDF File

TLC2201-SP
TLC2201-SP

Overview
TLC2201-SP www.
ti.
com SLOS710 – FEBRUARY 2011 CLASS V, ADVANCED LinCMOS™ LOW NOISE PRECISION OPERATIONAL AMPLIFIER Check for Samples: TLC2201-SP FEATURES 1 •23 QML-V Qualifed SMD 5962-9088203V2A • Low Input Offset Voltage: 400 μV Max • Excellent Offset Voltage Stability With Temperature: 0.
5 μV/°C Typ • Rail-to-Rail Output Swing • Low Input Bias Current: 1 pA Typ at TA = 25°C • Common-Mode Input Voltage Range Includes the Negative Rail • Fully Specified For Both Single-Supply and Split-Supply Operation FK PACKAGE (TOP VIEW) 3 2 1 20 19 NC 4 18 NC IN- 5 17 VDD + NC 6 16 NC IN + 7 15 OUT NC 8 14 NC 9 10 11 12 13 NC NC VDD- /GND NC NC NC NC NC NC NC NC - No internal connection DESCRIPTION The TLC2201 is a precision, low-noise operational amplifier using Texas Instruments Advanced LinCMOS™ process.
This device combines the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers.
The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology.
In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.
The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.
The device inputs and outputs are designed to withstand −100-mA surge currents without sustaining latch-up.
In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.
2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.
The T...


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