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ALD110900A

Advanced Linear Devices
Part Number ALD110900A
Manufacturer Advanced Linear Devices
Description PRECISION MATCHED PAIR MOSFET ARRAY
Published Feb 21, 2020
Detailed Description ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD110800A/ALD110800/ALD110900A/ALD110900 QUAD/DUAL N-CHANNE...
Datasheet PDF File ALD110900A PDF File

ALD110900A
ALD110900A


Overview
ADVANCED LINEAR DEVICES, INC.
e TM EPAD ® ENAB L E D ALD110800A/ALD110800/ALD110900A/ALD110900 QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS(th)= +0.
00V GENERAL DESCRIPTION ALD110800A/ALD110800/ALD110900A/ALD110900 are high precision monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology.
These devices are members of the EPAD® Matched Pair MOSFET Family.
Intended for low voltage small signal applications, the ALD110800/ ALD110900 features Zero-Threshold™ voltage, which reduces or eliminates input to output voltage level shift, including circuits where the signal is referenced to GND or V+.
This feature greatly reduces output signal voltage level shift and enhances signal operating range, especially for very low operating voltage environments.
With these zero threshold devices, an analog circuit with multiple stages can be constructed to operate at extremely low supply or bias voltage levels.
For example, an input amplifier stage operating at 0.
2V supply voltage has been demonstrated.
ALD110800A/ALD110800/ALD110900A/ALD110900 matched pair MOSFETs are designed for exceptional device electrical characteristics matching with the threshold voltage set precisely at +0.
00V +/-0.
01V, featuring a typical offset voltage of only +/-0.
001V (1mV).
As these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics.
They are versatile as design components for a broad range of analog applications such as basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications.
Besides matched pair electrical characteristics, each individual MOSFET also exhibits well controlled parameters, enabling the user to depend on tight design limits.
Even units from different batches and different date of manufacture have correspondingly well matched characteristics.
These devices are built for minimum o...



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