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DAP202N3

CYStech
Part Number DAP202N3
Manufacturer CYStech
Description High-speed double diode
Published Feb 24, 2020
Detailed Description CYStech Electronics Corp. High –speed double diode DAP202N3 Spec. No. : C303N3P Issued Date : 2003.05.27 Revised Date :...
Datasheet PDF File DAP202N3 PDF File

DAP202N3
DAP202N3

Overview
CYStech Electronics Corp.
High –speed double diode DAP202N3 Spec.
No.
: C303N3P Issued Date : 2003.
05.
27 Revised Date : 2017.
12.
01 Page No.
: 1/6 Description The DAP202N3 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in a small SOT-23 plastic SMD package.
Equivalent Circuit DAP202N3 21 Outline SOT-23 Common Anode 3 1：Cathode 2：Cathode 3：Common Anode Cathode Cathode Features • Small plastic SMD package • High switching speed: max.
4ns • Continuous reverse voltage: max.
100V • Repetitive peak reverse voltage: max.
110V • Repetitive peak forward current: max.
450mA.
Ordering Information Device DAP202N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name DAP202N3 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings @TA=25℃ Parameters Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current(single diode loaded) Continuous forward current(double diode loaded) Repetitive peak forward current Non-repetitive peak forward current @square wave, Tj=125℃ prior to surge t=1μs t=1ms t=1s Total power dissipation(Note 1) Junction Temperature Storage Temperature Note 1: Device mounted on an FR-4 PCB.
Symbol VRRM VR IF IFRM IFSM Ptot Tj Tstg Min - - -65 Spec.
No.
: C303N3P Issued Date : 2003.
05.
27 Revised Date : 2017.
12.
01 Page No.
: 2/6 Max 110 100 215 125 450 4 1 0.
5 250 150 +150 Unit V V mA mA A A A mW °C °C Electrical Characteristics @ Tj=25℃ unless otherwise specified Parameters Forward voltage Reverse current Diode capacitance Reverse recovery time Forward recovery voltage Symbol Conditions Min Typ.
Max Unit IF=1mA VF IF=10mA IF=50mA IF=150mA VR=25V IR VR=100V VR=25V...


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