DatasheetsPDF.com

PPM6N20V10

WILLAS
Part Number PPM6N20V10
Manufacturer WILLAS
Description P-Channel MOSFET
Published Feb 25, 2020
Detailed Description WͲŚĂŶŶĞůůŽǁŽŶͲƌĞƐŝƐƚĂŶĐĞDK^&d PRIMARY CHARACTERISTICS VDS(V) RDS(on)(mΩ) ID(A) -20 14@VGS=-4.5V -10 FEATURES...
Datasheet PDF File PPM6N20V10 PDF File

PPM6N20V10
PPM6N20V10

Overview
WͲŚĂŶŶĞůůŽǁŽŶͲƌĞƐŝƐƚĂŶĐĞDK^&d PRIMARY CHARACTERISTICS VDS(V) RDS(on)(mΩ) ID(A) -20 14@VGS=-4.
5V -10 FEATURES  The enhancement mode MOS is extremely high density cell and low on-resistance.
Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation Continuous Pulsed TA=25℃ TA=125℃ TA=25℃ TA=70℃ Operating and Storage Junction Temperature Range WWDϲEϮϬsϭϬ DFN2*2-6L PACKAGE Bottom View （D） （D） （G） 12 3 DS 65 4 （D） （D） （S） Internal structure （D） 1 （D） 2 （G） 3 6 （D） 5 （D） 4 （S） MECHANICAL DATA  Case：Molded plastic,DFN2*2-6L  Polarity：Shown above  Terminals :Plated terminals, solderable per MIL-STD-750,Method ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)