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PNMT50V02E

Prisemi
Part Number PNMT50V02E
Manufacturer Prisemi
Description N-Channel MOSFET
Published Feb 25, 2020
Detailed Description Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V)...
Datasheet PDF File PNMT50V02E PDF File

PNMT50V02E
PNMT50V02E

Overview
Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 50 MOSFET Product Summary RDS(on)(Ω) ID(A) 1@VGS=10V 0.
22 PNMT50V02E N-Channel MOSFET D (3) G (1) Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current- Continuous Drain Current-Pulsed(Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient S (2) Symbol VDS VGS ID IDM PD TJ, TSTG Symbol RθJA Maximum 50 ±20 0.
22 0.
88 0.
35 -55 to 150 Maximum 350 Units V V A A W ℃ Units ℃/W Rev.
06 1 www.
prisemi.
com N-Channel MOSFET PNMT50V02E Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Off Characteristics Drain-Source Breakdown Voltage BVDSS ID =250μA,VGS=0V Zero Gate Voltage Drain Current IDSS VDS =50V,VGS=0V Gate-Body Leakage Current IGSS VDS =0V,VGS=±12V On Characteri...


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