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PNMT7002E

Prisemi
Part Number PNMT7002E
Manufacturer Prisemi
Description N-Channel MOSFET
Published Feb 25, 2020
Detailed Description Description The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.  Tren...
Datasheet PDF File PNMT7002E PDF File

PNMT7002E
PNMT7002E

Overview
Description The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.
 Trench Power MV MOSFET technology  Voltage controlled small signal switch  Low input Capacitance  Fast Switching Speed  Low Input / Output Leakage MOSFET Product Summary VDS(V) 60 RDS(on)(Ω) 4@VGS = 10V 5@VGS = 5V ID(A) 0.
34 Applications  Battery operated systems  Solid-state relays  Direct logic-level interface：TTL/CMOS PNMT7002E N-Channel MOSFET Top View Circuit Diagram 7002E Absolute maximum rating@25℃ Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current1) Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State2) Junction and Storage Temperature Range Notes： 1) Pulse Test: Pulse Width≤300μs,Duty cycle ≤2%.
2) Device mounted on FR-4 PCB, 1 inch x 0.
85 inch x 0.
062 inch.
Rev.
06 1 Marking (Top View) Symbol VDS VGS ID IDM PD RθJA TJ,TSTG Value 60 ±20 115 1.
5 200 215 -55~+150 Units V V mA A mW ...


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