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PNMT20V6

Prisemi
Part Number PNMT20V6
Manufacturer Prisemi
Description N-Channel MOSFET
Published Feb 25, 2020
Detailed Description Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 20 MOSFET Product Su...
Datasheet PDF File PNMT20V6 PDF File

PNMT20V6
PNMT20V6

Overview
Description The enhancement mode MOS is extremely high density cell and low on-resistance.
VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.
024@ VGS=4.
5V 5.
5 PNMT20V6 N-Channel MOSFET D（3） G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS BVDSS ID =250μA,VGS=0V IDSS VDS =16V,VGS=0V IGSS VDS =0V,VGS=±8V VGS(th) VDS =VGS, ID =250μA RDS(ON) VGS=4.
5V...


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