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PPMT2301

Prisemi
Part Number PPMT2301
Manufacturer Prisemi
Description P-Channel MOSFET
Published Feb 25, 2020
Detailed Description Description  Trench Power LV MOSFET technology  High Power and Current handing capability  Low Gate Charge MOSFET Pr...
Datasheet PDF File PPMT2301 PDF File

PPMT2301
PPMT2301

Overview
Description  Trench Power LV MOSFET technology  High Power and Current handing capability  Low Gate Charge MOSFET Product Summary VDS(V) -20 RDS(on)(mΩ) 90@VGS = -4.
5V 135@VGS = -2.
5V ID(A) -4.
0 Applications  PWM applications  Load switch  Power management PPMT2301 P-Channel MOSFET Top View Circuit Diagram 2301 Absolute maximum rating@25℃ Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current1) TA=25℃ @ Steady State TA=70℃ @ Steady State Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State2) Junction and Storage Temperature Range Notes： 1) Pulse Test: Pulse Width≤300μs,Duty cycle ≤2%.
2) Device mounted on FR-4 P...


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