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PPMS8N20V3

Prisemi
Part Number PPMS8N20V3
Manufacturer Prisemi
Description P-Channel MOSFET
Published Feb 25, 2020
Detailed Description Description PPMS8N20V3 P-Channel 1.8-V (G-S) MOSFET with Schottky Diode VDS(V) -20 MOSFET Product Summary RDS(on)(Ω)...
Datasheet PDF File PPMS8N20V3 PDF File

PPMS8N20V3
PPMS8N20V3

Overview
Description PPMS8N20V3 P-Channel 1.
8-V (G-S) MOSFET with Schottky Diode VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.
110 @ VGS=-4.
5V -2.
8 0.
160 @ VGS=-2.
5V -2.
0 0.
240 @ VGS=-1.
8V -1.
8 S（3） K（7、8） G（4） VKA(V) 20 Schottky Product Summary VF(V) IF(A) 0.
48V @ 0.
5A 1.
0 D（5、6） A（1、2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ=150°C) (MOSFET) TA=25°C TA=85°C Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Sch...


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