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PDM6T20V3

Prisemi
Part Number PDM6T20V3
Manufacturer Prisemi
Description N- & P-Channel MOSFET
Published Feb 25, 2020
Detailed Description PDM6T20V3 N-Channel and P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-...
Datasheet PDF File PDM6T20V3 PDF File

PDM6T20V3
PDM6T20V3

Overview
PDM6T20V3 N-Channel and P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance.
VDS(V) MOSFET Product Summary RDS(on)(Ω) N-Channel 20 0.
043@ VGS=4.
5V P-Channel -20 0.
08@ VGS=-4.
5V ID(A) 3 -2.
8 N-Channel Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation Operating Junction Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A t≤10s Pin configuration (Top view) Symbol VDS VGS ID ID PD TJ Symbol θJA Value 20 ±8 3 9 1.
25 -55 to 150 Typ Max - 100 Units V V A A W ℃ Units ℃/W Rev.
06.
2 1 www.
prisemi.
com N-Channel...


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