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PSBD2FD20V1H

Prisemi
Part Number PSBD2FD20V1H
Manufacturer Prisemi
Description Schoktty Barrier Diode
Published Feb 27, 2020
Detailed Description Feature  Forward Current: 1A  Reverse voltage: 20V  Low forward voltage  Low leakage current  Trench MOS barrier Sc...
Datasheet PDF File PSBD2FD20V1H PDF File

PSBD2FD20V1H
PSBD2FD20V1H

Overview
Feature  Forward Current: 1A  Reverse voltage: 20V  Low forward voltage  Low leakage current  Trench MOS barrier Schottky technology  Ultra Small mold type.
(DFN1006-2L) PSBD2FD20V1H Low VF Schoktty Barrier Diode DFN1006-2L (Bottom View) Applications  Low current rectification  Voltage clamping  Protection circuits  Ultra high-speed switching Mechanical Characteristics  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  DFN1006-2L without plating Electrical characteristics per line@25℃ Parameter Forward voltage Forward voltage Forward voltage Forward voltage Reverse current Junction Capacitance Symbol VF VF VF VF IR CJ Min.
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