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MTB20N04J3

CYStech
Part Number MTB20N04J3
Manufacturer CYStech
Description N-Channel Enhancement Mode Power MOSFET
Published Mar 6, 2020
Detailed Description CYStech Electronics Corp. Spec. No. : C978J3 Issued Date : 2015.01.05 Revised Date : Page No. : 1/9 N -Channel Enhance...
Datasheet PDF File MTB20N04J3 PDF File

MTB20N04J3
MTB20N04J3

Overview
CYStech Electronics Corp.
Spec.
No.
: C978J3 Issued Date : 2015.
01.
05 Revised Date : Page No.
: 1/9 N -Channel Enhancement Mode Power MOSFET MTB20N04J3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C Features RDSON(TYP) VGS=10V, ID=10A VGS=4.
5V, ID=8A • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package 40V 23A 16.
3A 17.
5mΩ 20.
8mΩ Equivalent Circuit MTB20N04J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB20N04J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB20N04J3 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=1mH, ID=18A, RG=25Ω Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1.
Pulse width limited by maximum junction temperature *2.
Duty cycle ≤ 1% Symbol VDS VGS ID ID IDM IAS EAS PD Tj, Tstg Spec.
No.
: C978J3 Issued Date : 2015.
01.
05 Revised Date : Page No.
: 2/9 Limits 40 ±20 23 16.
3 92 18 162 30 15 -55~+175 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 5 62.
5 Unit °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Min.
Typ.
Max.
Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 GFS *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg 40 1 - - - 2.
5 V VGS=0V, ID=250μA VDS ...


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