DatasheetsPDF.com

MTE100N10KRH8

CYStech
Part Number MTE100N10KRH8
Manufacturer CYStech
Description N-Channel Enhancement Mode Power MOSFET
Published Mar 6, 2020
Detailed Description CYStech Electronics Corp. Spec. No. : C059H8 Issued Date : 2017.04.25 Revised Date : Page No. : 1/ 10 N-Channel Enhanc...
Datasheet PDF File MTE100N10KRH8 PDF File

MTE100N10KRH8
MTE100N10KRH8

Overview
CYStech Electronics Corp.
Spec.
No.
: C059H8 Issued Date : 2017.
04.
25 Revised Date : Page No.
: 1/ 10 N-Channel Enhancement Mode Power MOSFET MTE100N10KRH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=2A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD protected gate • Pb-free lead plating and Halogen-free package 100V 6.
8A 3.
0A 102mΩ(typ) Symbol MTE100N10KRH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTE100N10KRH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTE100N10KRH8 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C059H8 Issued Date : 2017.
04.
25 Revised Date : Page No.
: 2/ 10 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 5) Continuous Drain Current @TC=100°C, VGS=10V (Note 5) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current @L=0.
1mH (Note 3) Body Diode Continuous Forward Current Single Pulse Avalanche Energy @ L=1mH, ID=8Amps, VDD=25V (Note 4) Repetitive Avalanche Energy (Note 3) TC=25°C (Note 1) Power Dissipation TC=100°C TA=25°C (Note 1) (Note 2) TA=70°C (Note 2) Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID IDSM IDM IAS IS EAS EAR PD PDSM Tj, Tstg Limits 100 ±20 6.
8 4.
3 3 2.
4 23 16 6.
8 32 1.
3 12.
5 5 2.
5 1.
6 -55~+150 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Juncti...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)