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SVF12N60CF

Silan Microelectronics
Part Number SVF12N60CF
Manufacturer Silan Microelectronics
Description 600V N-CHANNEL MOSFET
Published Mar 9, 2020
Detailed Description SVF12N60CF_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N60CF is an N-channel enhancement mode power MO...
Datasheet PDF File SVF12N60CF PDF File

SVF12N60CF
SVF12N60CF


Overview
SVF12N60CF_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N60CF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.
The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES  12A,600V,RDS(on)(typ.
)=0.
58@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
SVF12N60CF Package TO-220F-3L Marking SVF12N60CF Hazardous Substance Control Halogen free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.
,LTD http: //www.
silan.
com.
cn Rev.
:1.
3 Page 1 of 7 SVF12N60CF_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Ratings 600 ±30 12 7.
6 48 51 0.
41 798 -55～+150 -55～+150 Unit V V A A W W/C mJ C C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Ratings 2.
44 62.
5 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGS...


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