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SVD3410T

Silan Microelectronics
Part Number SVD3410T
Manufacturer Silan Microelectronics
Description 100V N-CHANNEL MOSFET
Published Mar 9, 2020
Detailed Description SVD3410D/M/T_Datasheet 17A, 100V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3410D/M/T is an N-channel enhancement mode hig...
Datasheet PDF File SVD3410T PDF File

SVD3410T
SVD3410T


Overview
SVD3410D/M/T_Datasheet 17A, 100V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3410D/M/T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
It is widely used in vehicle voltage regulator etc.
FEATURES  17A,100V,RDS(on)(typ.
)=68m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No.
SVD3410D SVD3410DTR SVD3410M SVD3410T Package TO-252-2L TO-252-2L TO-251D-3L TO-220-3L Marking SVD3410D SVD3410D SVD3410M SVD3410T Material Halogen free Halogen free Halogen free Pb free Packing Tube Tape & Reel Tube Tube ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Rating SVD3410D/M SVD3410T 100 ±16 17 12 60 83 100 0.
66 0.
80 150 -55～+175 -55～+175 Unit V V A A W W/C mJ C C HANGZHOU SILAN MICROELECTRONICS CO.
,LTD http: //www.
silan.
com.
cn Rev.
:1.
5 Page 1 of 8 SVD3410D/M/T_Datasheet THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVD3410D/M 1.
51 62.
5 Rating SVD3410T 1.
25 62.
5 Unit C/W C/W ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-...


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