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SVF4N150F


Part Number SVF4N150F
Manufacturer SILAN MICROELECTRONICS
Title 1500V N-CHANNEL MOSFET
Description SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-volta...
Features  4A, 1500V, RDS(on)(typ)=5.0@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 12 3 TO-220F-3L 1. Gate 2. Drain 3. Source 123 TO-3PF 12 3 TO-247-3L ORDERING INFORMATION Part No. SVF4N150PF SVF4N150P7 SVF4N150F Package TO-3PF TO-247-3L TO-220F-3L Marking...

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SVF4N150P7 : SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in power supplies. FEATURES  4A, 1500V, RDS(on)(typ)=5.0@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 12 3 TO-220F-3L 1. Gate 2. Drain 3. Source 123 TO-3PF 12 3 TO-247-3L ORDERING INFORMATION Part No. SVF4N150PF SVF4N150P7 SVF4N150F.

SVF4N150PF : SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in power supplies. FEATURES  4A, 1500V, RDS(on)(typ)=5.0@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 12 3 TO-220F-3L 1. Gate 2. Drain 3. Source 123 TO-3PF 12 3 TO-247-3L ORDERING INFORMATION Part No. SVF4N150PF SVF4N150P7 SVF4N150F.




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