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SGM75HF12A1TFD

Silan Microelectronics
Part Number SGM75HF12A1TFD
Manufacturer Silan Microelectronics
Description 1200V IGBT MODULE
Published Mar 9, 2020
Detailed Description Silan Microelectronics SGM75HF12A1TFD_Datasheet 75A, 1200V IGBT MODULE DESCRIPTION SGM75HF12A1TFD Module offers the op...
Datasheet PDF File SGM75HF12A1TFD PDF File

SGM75HF12A1TFD
SGM75HF12A1TFD


Overview
Silan Microelectronics SGM75HF12A1TFD_Datasheet 75A, 1200V IGBT MODULE DESCRIPTION SGM75HF12A1TFD Module offers the optimum performance for UPS, AC inverter drive and electronic welders.
FEATURES  75A, 1200V, VCE(sat)(typ.
) =2.
2V@IC=75A  VCE(sat) with positive temperature coefficient  High short circuit capability  Low switching loss  Isolated copper baseplate using DBC technology A1 NOMENCLATURE SGM75HF12A1TFD IGBT Module Series Nominal Current: e.
g.
75=75A Feature and grade: TF short switching time; D- industrial grade Package Type: Cu Base, DBC, 94mm×34mm×30mm Circuit Configuration: Half Bridge Voltage: e.
g.
12=1200V ORDERING INFORMATION Part No.
SGM75HF12A1TFD Package A1 Marking SGM75HF12A1TFD Packing Carton ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Characteristics Symbol Ratings Collector to Emitter Voltage Gate to Emitter Voltage Collector Current TC=80°C Repetitive Pulsed Collector Current TC=80°C Operating Junction Temperature Range Storage Temperature Range Isolation Voltage To heat sink M6 To terminals M5 Weight VCE VGE IC ICRM TJ Tstg Viso Ms Mt W 1200 ±20 75 150 -40~+125 -40~+125 2500 3~5 2.
5~5 160 Units V V A A C C V Nm Nm g HANGZHOU SILAN MICROELECTRONICS CO.
,LTD http: //www.
silan.
com.
cn Rev.
:1.
5 Page 1 of 8 Silan Microelectronics SGM75HF12A1TFD_Datasheet THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (FRD) Thermal Resistance, Case to Sink Symbol RθJC RθJC RθCS Ratings 0.
33 0.
56 0.
03 ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted) Characteristics Collector-emitter saturation voltage Gate threshold voltage Collect-emitter cut-off current G-E Leakage Current Integrated Gate Resistor Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Loss (per pulse) Turn-Off Switching Loss (per pulse) S-...



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