DatasheetsPDF.com

SVS11N60FJD2

Silan Microelectronics
Part Number SVS11N60FJD2
Manufacturer Silan Microelectronics
Description 600V DP MOS POWER TRANSISTOR
Published Mar 9, 2020
Detailed Description SVS11N60D/F/S/FJ/T/KD2_Datasheet 11A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N60D/F/S/FJ/T/KD2 is an N-channel ...
Datasheet PDF File SVS11N60FJD2 PDF File

SVS11N60FJD2
SVS11N60FJD2

Overview
SVS11N60D/F/S/FJ/T/KD2_Datasheet 11A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.
e.
, suitable for hard and soft switching topologies.
FEATURES  11A,600V, RDS(on)(typ.
)=0.
3@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No.
SVS11N60DD2TR SVS11N60FD2 SVS11N60SD2 SVS11N60SD2TR SVS11N60FJD2 SVS11N60TD2 SVS11N60KD2 Package TO-252-2L TO-220F-3L TO-263-2L TO-263-2L TO-220FJ-3L TO-220-3L TO-262-3L Marking 11N60DD2 11N60FD2 11N60SD2 11N60SD2 11N60FJD2 11N60TD2 11N60KD2 Hazardous Substance Control Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free Packing Tape & Reel Tube Tube Tape & Reel Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.
,LTD http: //www.
silan.
com.
cn Rev.
:2.
0 Page 1 of 11 SVS11N60D/F/S/FJ/T/KD2_Datasheet ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation (TC=25C) - Derate above 25C Single Pulsed Avalanche Energy (Note1) Reverse diode dv/dt (Note 2) MOSFET dv/dt ruggedness (Note 3) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS dv/dt dv/dt TJ Tstg SVS11N60 DD2 89 0.
71 Ratings SVS11N60 F/FJD2 600 ±30 11 7 44 35 0.
28 310 15 50 -55～+150 -55～+150 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVS11N60 DD2 1.
40 62.
0 Ratings SVS11N60 F/FJD2 3.
57 62.
50 SVS1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)