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SVF4N80MJ

Silan Microelectronics
Part Number SVF4N80MJ
Manufacturer Silan Microelectronics
Description 800V N-CHANNEL MOSFET
Published Mar 9, 2020
Detailed Description SVF4N80F/D/MJ/K_Datasheet 4A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N80F/D/MJ/K is an N-channel enhancement mode...
Datasheet PDF File SVF4N80MJ PDF File

SVF4N80MJ
SVF4N80MJ

Overview
SVF4N80F/D/MJ/K_Datasheet 4A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N80F/D/MJ/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.
The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES  4A,800V, RDS(on)(typ.
)=3.
3@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
SVF4N80F SVF4N80D SVF4N80DTR SVF4N80MJ SVF4N80K Package TO-220F-3L TO-252-2L TO-252-2L TO-251J-3L TO-262-3L Marking SVF4N80F SVF4N80D SVF4N80D SVF4N80MJ SVF4N80K Hazardous substance control Pb free Halogen free Halogen free Halogen free Pb free Packing Tube Tube Tape&Reel Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.
,LTD http: //www.
silan.
com.
cn Rev.
:2.
2 Page 1 of 11 SVF4N80F/D/MJ/K_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25C TC=100C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg SVF4N80 F 35 0.
28 Ratings SVF4N80 SVF4N80 D MJ 800 ±30 4.
0 2.
5 16.
0 95 97 0.
76 0.
78 245 -55～+150 -55～+150 SVF4N80 K 120 0.
96 Unit V V A A W W/C mJ C C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVF4N80 F 3.
57 62.
5 Ratings SVF4N80 SVF4N80 D MJ 1.
32 1.
29 62.
0 62.
0 SVF4N80 K 1.
04 62.
5 Unit C/W C/W HANGZHOU SILAN MICROELECTRONICS CO.
,LTD http: //www.
silan.
com.
cn Rev.
:2.
2 Page 2 of 11 SVF4N80F/D/MJ/...


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