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SVF4N60CAMJ

SILAN MICROELECTRONICS
Part Number SVF4N60CAMJ
Manufacturer SILAN MICROELECTRONICS
Description 600V N-CHANNEL MOSFET
Published Mar 9, 2020
Detailed Description SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel en...
Datasheet PDF File SVF4N60CAMJ PDF File

SVF4N60CAMJ
SVF4N60CAMJ

Overview
SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.
The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES  4A, 600V, RDS(on)(typ.
)=2.
0@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE Silan VDMOS Code of F-Cell process Nominal current,using 1 or 2 digits: Example:4 denotes 4A N denotes N Channel Package information.
Example: F:TO-220F; K:TO-262; D:TO-252; MN:TO-251N; T:TO-220;MJ:TO-251J-3L.
REV.
Nominal Voltage,using 2 digits Example: 60 denotes 600V Special Features indication, May be omitted.
Example: E denotes embeded ESD structure HANGZHOU SILAN MICROELECTRONICS CO.
,LTD http: //www.
silan.
com.
cn Rev.
:2.
1 Page 1 of 12 SVF4N60CAF/K/D/T/MN/MJ_Datasheet ORDERING INFORMATION Part No.
SVF4N60CAF SVF4N60CAK SVF4N60CAT SVF4N60CADTR SVF4N60CAMN SVF4N60CAMJ Package TO-220F-3L TO-262-3L TO-220-3L TO-252-2L TO-251N-3L TO-251J-3L Marking SVF4N60CAF SVF4N60CAK SVF4N60CAT 4N60CAD 4N60CAMN 4N60CAMJ Hazardous Substance Control Halogen free Halogen free Pb free Halogen free Halogen free Halogen free Packing Tube Tube Tube Tape & Reel Tube Tube ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25C TC=100C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note1) Operation Junction Temperature Range Storage Temperature Range VDS VGS ID IDM PD EAS TJ Tstg SVF4N 60CAF 33 0.
26 SVF4N 60CAK 92 0.
74 Ratings SV...


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