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5N55-TC4

UTC
Part Number 5N55-TC4
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Mar 12, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 5N55-TC4 5A, 550V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 5N55-TC4 is...
Datasheet PDF File 5N55-TC4 PDF File

5N55-TC4
5N55-TC4

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 5N55-TC4 5A, 550V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 5N55-TC4 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology.
This technology allows a minimum on-state resistance and superior switching performance.
It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 5N55-TC4 is generally applied in high efficiency switch mode power supplies.
 FEATURES * RDS(ON) ≤ 1.
9Ω @ VGS=10V, ID=2.
5A * High Switching Speed  SYMBOL 2.
Drain 1 TO-251 1.
Gate 3.
Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5N55L-TM3-T 5N55G-TM3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251 Pin Assignment 123 GDS Packing Tube 5N55G-TM3-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube (2) TM3: TO-251 (3) G: Halogen Free and Lead Free, L: Lead Free  MARKING Lot Code UTC 5N50 1 L: Lead Free G: Halogen Free Date Code www.
unisonic.
com.
tw Copyright © 2019 Unisonic Technologies Co.
, Ltd 1 of 8 QW-R205-588.
A 5N55-TC4 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS dv/dt 550 V ± 30 V 5A 10 A 51.
2 mJ 4.
1 V/ns Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
3.
L = 10mH, IAS = 3.
2A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4.
ISD ≤ 5.
0A, di/dt ≤100A/μs, VDD ≤BVDSS, Starting TJ = 25°C  THERMAL DATA ...


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