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MTB1K0N20KL3

CYStech
Part Number MTB1K0N20KL3
Manufacturer CYStech
Description N-Channel Enhancement Mode Power MOSFET
Published Mar 14, 2020
Detailed Description CYStech Electronics Corp. N-Channel Enhancement Mode MOSFET MTB1K0N20KL3 Spec. No. : C043L3 Issued Date : 2017.07.03 Re...
Datasheet PDF File MTB1K0N20KL3 PDF File

MTB1K0N20KL3
MTB1K0N20KL3

Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode MOSFET MTB1K0N20KL3 Spec.
No.
: C043L3 Issued Date : 2017.
07.
03 Revised Date : 2018.
02.
09 Page No.
: 1/9 Features • Low Gate Charge • Simple Drive Requirement • ESD protected gate, HBM 6kV, typically • Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.
5V, ID=1A 200V 1A 830mΩ (typ.
) 777mΩ (typ.
) Equivalent Circuit MTB1K0N20KL3 Outline SOT-223 D G：Gate D：Drain S：Source S D G Ordering Information Device MTB1K0N20KL3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB1K0N20KL3 Preliminary CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current *1 Avalanche Current @ L=0.
1mH Avalanche Energy @ L=1mH, ID=2A, VDD=50V *2 Repetitive Avalanche Energy @ L=0.
05mH ESD susceptibility *3 Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=70℃ Operating Junction and Storage Temperature Range Note : *1.
Pulse width limited by maximum junction temperature *2.
Guaranteed by design, not by 100% test.
*3.
Human body model, 1.
5kΩ in series with 100pF Symbol VDS VGS ID IDM IAS EAS EAR VESD PD Tj, Tstg Spec.
No.
: C043L3 Issued Date : 2017.
07.
03 Revised Date : 2018.
02.
09 Page No.
: 2/9 Limits 200 ±20 1 0.
8 4 2 2 0.
625 6000 2.
4 1.
5 -55~+150 Unit V A mJ V W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Note : When mounted on a 1 in2 pad of 2 oz.
copper.
Symbol RθJC RθJA Value 10 52 (Note) Unit °C/W Character...


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