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AM1160AH

AiT Semiconductor
Part Number AM1160AH
Manufacturer AiT Semiconductor
Description N-CHANNEL MOSFET
Published Mar 15, 2020
Detailed Description AiT Semiconductor Inc. www.ait-ic.com AM1160AH MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES AM1160AH is av...
Datasheet PDF File AM1160AH PDF File

AM1160AH
AM1160AH

Overview
AiT Semiconductor Inc.
www.
ait-ic.
com AM1160AH MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES AM1160AH is available in TO-220, TO-220F and  TO-251 packages.
    600V/11A, RDS(ON)= 0.
36Ω(max.
) @ VGS= 10V VDS@TJ, max=700V (typ.
) Reliable and Rugged Avalanche Rated 100% UIS + Rg Tested Available in TO-220, TO-220F and TO-251 packages.
ORDERING INFORMATION APPLICATION Package Type Part Number TO-220 SPQ: 50pcs/Tube AM1160AHT3U T3 AM1160AHT3VU TO-220F SPQ: 50pcs/Tube AM1160AHT3FU T3F AM1160AHT3FVU TO-251 SPQ: 75pcs/Tube AM1160AHTS3U TS3 AM1160AHTS3VU Note V: Halogen free Package U: Tube AiT provides all RoHS products  AC/DC Power Conversion in Switched Mode Power Supplies (SMPS).
 Uninterruptible Power Supply (UPS),  Adapter.
PIN DESCRIPTION REV1.
0 - SEP 2019 RELEASED - N-Channel MOSFET -1- AiT Semiconductor Inc.
www.
ait-ic.
com PIN DESCRIPTION AM1160AH MOSFET N-CHANNEL ENHANCEMENT MODE Top View Pin # 1 2 3 Top View Symbol G D S Top View Function Gate Drain Source REV1.
0 - SEP 2019 RELEASED - -2- AiT Semiconductor Inc.
www.
ait-ic.
com AM1160AH MOSFET N-CHANNEL ENHANCEMENT MODE ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage 600V VGSS, Gate-Source Voltage ±30V TJ, Maximum Junction Temperature 150℃ TSTG, Storage Temperature Range -55℃~+150℃ IS, Diode Continuous Forward Current 11ANOTE1 IDPNOTE2, Pulse Drain Current Tested TC=25°C 44ANOTE1 ID, Continuous Drain Current TC=25°C TC=100°C 11ANOTE1 7ANOTE1 PD, Maximum Power Dissipation for TO-220/TO-251 TC=25°C TC=100°C 113W 45W PD, Maximum Power Dissipation for TO-220F TC=25°C TC=100°C 31W 12.
5W RθJC, Thermal Resistance-Junction to Case for TO-220/TO-251 1.
1°C/W RθJC, Thermal Resistance-Junction to Case for TO-220F 4°C/W RθJA, Thermal Resistance-Junction to Ambient 62.
5°C/W Drain-Source Avalanche Ratings dv/dtNOTE3, MOSFET dv/dt Ruggedness 50V/ns EASNOTE4, Avalanche Energy, Single Pulsed 144mJ IARNOTE5, Avalanch...


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