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STP33N60DM6

STMicroelectronics
Part Number STP33N60DM6
Manufacturer STMicroelectronics
Description N-channel MOSFET
Published Mar 17, 2020
Detailed Description STP33N60DM6 Datasheet N-channel 600 V, 115 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package TAB TO-220 1 2...
Datasheet PDF File STP33N60DM6 PDF File

STP33N60DM6
STP33N60DM6

Overview
STP33N60DM6 Datasheet N-channel 600 V, 115 mΩ typ.
, 25 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package TAB TO-220 1 23 D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on) max.
STP33N60DM6 600 V 128 mΩ • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 25 A Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series.
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Product status link STP33N60DM6 Product summary Order code STP33N60DM6 Marking 33N60DM6 Package TO-220 Packing Tube DS12878 - Rev 2 - January 2019 For further information contact your local STMicroelectronics sales office.
www.
st.
com STP33N60DM6 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1.
Pulse width is limited by safe operating area.
2.
ISD ≤ 25 A, di/dt ≤ 900 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V 3.
VDS ≤ 480 V Symbol Rthj-case Rthj-amb Table 2.
Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient Value ±25 25 16 80 190 50 100 -55 to 150 Unit V A A A W V/ns V/ns °C Value 0.
66 62.
5 Unit °C/W °C/W Symbol IAR EAS Table 3.
A...


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