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MTB050N15ARJ3

CYStech
Part Number MTB050N15ARJ3
Manufacturer CYStech
Description N-Channel Power MOSFET
Published Mar 17, 2020
Detailed Description CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB050N15ARJ3 Spec. No. : C035J3 Issued Date : 2019.0...
Datasheet PDF File MTB050N15ARJ3 PDF File

MTB050N15ARJ3
MTB050N15ARJ3

Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET MTB050N15ARJ3 Spec.
No.
: C035J3 Issued Date : 2019.
06.
03 Revised Date : Page No.
: 1/ 9 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  RoHS compliant package BVDSS ID@TC=25C, VGS=10V RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=4.
5V, ID=10A 150V 20.
6A 46.
4 mΩ(typ) 50.
8 mΩ(typ) Symbol MTB050N15ARJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB050N15ARJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB050N15ARJ3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C035J3 Issued Date : 2019.
06.
03 Revised Date : Page No.
: 2/ 9 Absolute Maximum Ratings (TC=25C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25C, VGS=10V (Note 1) Continuous Drain Current @TC=100C, VGS=10V (Note 1) Continuous Drain Current @TA=25C, VGS=10V (Note 2) Continuous Drain Current @TA=70C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V Single Pulse Avalanche Current @L=0.
1mH (Note 3) Single Pulse Avalanche Energy @ L=0.
5mH, ID=20 Amps, VDD=50V (Note 5) Repetitive Avalanche Energy (Note 3) TC=25C (Note 1) Power Dissipation TC=100C TA=25C (Note 1) (Note 2) TA=70C (Note 2) Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID IDSM IDM IAS EAS EAR PD PDSM Tj, Tstg Limits 150 ±20 20.
6 14.
6 4.
6 3.
8 60 40 100 6 60 30 2.
5 1.
6 -55~+175 Unit V A mJ W C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Thermal Resistance, Junction-to-ambient,...


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