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SFP70N06

WINSEMI
Part Number SFP70N06
Manufacturer WINSEMI
Description Silicon N-Channel MOSFET
Published Mar 18, 2020
Detailed Description Features � 70A,60V, RDS(on)(Max0.014Ω)@VGS=10V � Ultra-low Gate charge(Typical 70nC) � Low Crss (Typical 160pF) � Improv...
Datasheet PDF File SFP70N06 PDF File

SFP70N06
SFP70N06

Overview
Features � 70A,60V, RDS(on)(Max0.
014Ω)@VGS=10V � Ultra-low Gate charge(Typical 70nC) � Low Crss (Typical 160pF) � Improved dv/dt capability � 100%Avalanche Tested � Maximum Junction Temperature Range(175℃) SFP70N06 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Semiwell's advanced planar stripe,DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power management in portable and,battery operated products.
Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg Junction and Storage Temperature Maximum Lead Temperature for soldering purpose, TL 1/8 form Case for 5 seconds Thermal Characteristics Symbol Parameter RQJC RQCS RQJA Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient (Note1) (Note2) (Note3) Value 60 70 51 280 ±25 800 7.
0 158 1.
05 -55~175 300 Units V A A A V mJ V/ ns W W/℃ ℃ ℃ Value Min Typ Max - - 0.
95 - 0.
5 - - 62.
5 Units ℃/W ℃/W ℃/W Rev.
A Oct.
2010 Copyright@Winsemi Microelectronics Co.
, Ltd.
, All right reserved.
Electrical Characteristics(Tc=25℃) SFP70N06 Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS=±25V,VDS=0V - - ±100 nA Drain cut -off current IDSS VDS=60V,VGS=0V - - 1 µA Drain -source breakdown voltage Breakdown voltage Temperature Coefficient V(BR)DSS △BVDSS/ △TJ ID=250 µA,VGS=0V ID=250µA,Referenced to 25℃ 60 - 0.
066 - V V/℃ Gate threshold voltage VGS(th) VDS=10V,ID=250 µA 2.
0 - 4.
0 V Drain -source ON resistance RDS(ON) VGS=10V,ID=3...


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