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P13009

Jingdao
Part Number P13009
Manufacturer Jingdao
Description Bipolar Junction Transistor
Published Mar 18, 2020
Detailed Description R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. P13009 Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．A...
Datasheet PDF File P13009 PDF File

P13009
P13009

Overview
R www.
jdsemi.
cn ShenZhen Jingdao Electronic Co.
,Ltd.
P13009 Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2．FEATURES High voltage capability Features of good high temperature High switching speed 3．PACKAGE 1 2 3 TO-3PB 4．Electrical Characteristics 4.
1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.
2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current DC Current Gain Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Typical Frequency BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE* VCE * sat VBE * sat tr tf ts fT VCBO VCEO VEBO IC Ptot Tj Tstg 700 400 9 12 3 120 150 -55～150 V V V A W ℃ ℃ TEST CONDITION IC=1mA，IE=0 IC=1mA，IB=0 IE=1mA，IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=3A IC=8A, IB=4A IC=8A, IB=4A IC=500mA (UI9600) VCE=10V,IC=0.
5A, f=1MHz VALUE MIN TYP MAX 700 400 9 10 20 10 8 15 40 0.
8 1.
4 0.
4 0.
10 0.
4 4.
0 7.
0 UNIT V V V μA μA μA V V μs μs μs 4 MHz ＊: Pulse test tp≤300μs,δ≤2% Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.
R.
C Tel：0755-29799516 Fax：0755-29799515 1 2013 R www.
jdsemi.
cn ShenZhen Jingdao Electronic Co.
,Ltd.
5.
Characteristic Curve Fig1 SOA（DC） 20 10 Ta=25℃ 125 100 P13009 Bipolar Junction Transistor Fig2 Ptot–T Ptot-Tc C (A) 1 0.
1 1 10 100 1000 VCE (V) Fig3 Static Characteristic 10 IB=500mA Ta=25℃ totP (W) 75 50 25 Ptot-Ta 0 0 50 100 T (℃ ) Fig4 hFE-IC 150 Ta=25...


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