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FQPF4N60

Oucan Semi
Part Number FQPF4N60
Manufacturer Oucan Semi
Description 4A N-Channel MOSFET
Published Mar 18, 2020
Detailed Description FQP4N60/FQPF4N60 600V,4A N-Channel MOSFET General Description Product Summary The FQP4N60 & FQPF4N60 have been fabric...
Datasheet PDF File FQPF4N60 PDF File

FQPF4N60
FQPF4N60

Overview
FQP4N60/FQPF4N60 600V,4A N-Channel MOSFET General Description Product Summary The FQP4N60 & FQPF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 4A < 2.
2Ω TO-220 Top View TO-220F D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP4N60 FQPF4N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 4 4* 2.
7 2.
7* 16 2.
5 94 188 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 104 0.
83 35 0.
28 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP4N60 65 0.
5 FQPF4N60 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
1.
2 3.
6 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static ...


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