DatasheetsPDF.com

NDS355AN

Part Number	NDS355AN
Manufacturer	ON Semiconductor
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published	Mar 22, 2020
Detailed Description	NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-C...
Datasheet	NDS355AN PDF File

Overview

NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low inline power loss are needed in a very small outline surface mount package.
1.
7A, 30 V, RDS(ON) = 0.
125 Ω @ VGS = 4.
5 V RDS(ON) = 0.
085 Ω @ VGS = 10 V.
...

Similar Datasheet

NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor - ON Semiconductor
NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor - Fairchild
NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor - Fairchild

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)