Part Number MTP1N100E
Manufacturer ON Semiconductor
Title Power Field Effect Transistor
Description MTP1N100E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor High−Performance Silicon−Gate CMOS This high voltage MOSFET uses an a...
Features VDS(on) Specified at Elevated Temperature TMOS POWER FET 1.0 AMPERES, 1000 VOLTS RDS(on) = 9.0 W TO−220AB CASE 221A−06 Style 5 D ®G MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value S Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Sour...

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MTP1N100E : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, thes.

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