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FDMC6679AZ

On Semiconductor
Part Number FDMC6679AZ
Manufacturer On Semiconductor
Description P-Channel MOSFET
Published Mar 22, 2020
Detailed Description MOSFET – P-Channel, POWERTRENCH) -30 V, -20 A, 10 mW FDMC6679AZ General Description The FDMC6679AZ has been designed to ...
Datasheet PDF File FDMC6679AZ PDF File

FDMC6679AZ
FDMC6679AZ

Overview
MOSFET – P-Channel, POWERTRENCH) -30 V, -20 A, 10 mW FDMC6679AZ General Description The FDMC6679AZ has been designed to minimize losses in load switch applications.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
Features • Max rDS(on) = 10 mW at VGS = −10 V, ID = −11.
5 A • Max rDS(on) = 18 mW at VGS = −4.
5 V, ID = −8.
5 A • HBM ESD Protection Level of 8 kV Typical (Note 3) • Extended VGSS range (−25 V) for Battery Applications • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability • This Device is Pb−Free and Halide Free Applications • Load Switch in Notebook and Server • Notebook Battery Pack Power Management DATA SHEET www.
onsemi.
com Pin 1 SS SG Top Bottom WDFN8 3.
3x3.
3, 0.
65P CASE 511DH DDDD MARKING DIAGRAM FDMC 6679AZ ALYW FDMC6679AZ = Specific Device Code A = Assembly Location L = Wafer Lot Number YW = Assembly Start Week PIN ASSIGNMENT D5 D6 D7 D8 4G 3S 2S 1S ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2009 1 August, 2022 − Rev.
5 Publication Order Number: FDMC6679AZ/D FDMC6679AZ MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current Continuous Continuous (Note 1a) Pulsed TC = 25°C TA = 25°C −30 V ±25 V −20 A −11.
5 −32 PD Power Dissipation TC = 25°C 41 W Power Dissipation (Note 1a) TA = 25°C 2.
3 TJ, TSTG Operating and Storage Junction Temperature Range −55 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit RqJC Thermal Resistance, Junction to Case 3.
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