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FDG6301N-F085

ON Semiconductor
Part Number FDG6301N-F085
Manufacturer ON Semiconductor
Description Dual N-Channel Digital FET
Published Mar 23, 2020
Detailed Description Dual N-Channel, Digital FET FDG6301N-F085 Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 ...
Datasheet PDF File FDG6301N-F085 PDF File

FDG6301N-F085
FDG6301N-F085

Overview
Dual N-Channel, Digital FET FDG6301N-F085 Features • 25 V, 0.
22 A Continuous, 0.
65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.
5 V, • RDS(ON) = 5 Ω @ VGS = 2.
7 V.
• Very Low Level Gate Drive Requirements allowing Directop− Eration in 3 V Circuits (VGS(th) < 1.
5 V) • Gate−Source Zener for ESD Ruggedness ( >6 kV Human Body Model) • Compact Industry Standard SC70−6 Surface Mount Package.
• AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Low Voltage Applications as a Replacement for Bipolar Digital Transistors and Small Signal MOSFETs MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDSS Drain to Source Voltage 25 V VGS Gate to Source Voltage 8V ID Drain Current Continuous 0.
22 A Pulsed 0.
65 PD Power Dissipation 0.
3 W TJ, TSTG ESD Operating and Storage Temperature Electrostatic Discharge Rating MIL−STD−883D Human Body Model (100 pF / 1500 W) −55 to 150 6.
0 °C kV R...


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