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STGWT80H65DFB

Part Number	STGWT80H65DFB
Manufacturer	STMicroelectronics
Description	IGBT
Published	Mar 25, 2020
Detailed Description	STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT 3 2 1 TO-247 TAB T...
Datasheet	STGWT80H65DFB PDF File

Overview

STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT 3 2 1 TO-247 TAB TO-3P 3 2 1 Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.
6 V (typ.
) @ IC = 80 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.
These devices are part of the new HB series of IGBTs, wh...

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STGWT80H65DFB IGBT - STMicroelectronics

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