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DS1220Y

Maxim Integrated
Part Number DS1220Y
Manufacturer Maxim Integrated
Description 16k Nonvolatile SRAM
Published Mar 27, 2020
Detailed Description 19-5579; Rev 10/10 www.maxim-ic.com FEATURES  10 years minimum data retention in the absence of external power  Data i...
Datasheet PDF File DS1220Y PDF File

DS1220Y
DS1220Y

Overview
19-5579; Rev 10/10 www.
maxim-ic.
com FEATURES  10 years minimum data retention in the absence of external power  Data is automatically protected during power loss  Directly replaces 2k x 8 volatile static RAM or EEPROM  Unlimited write cycles  Low-power CMOS  JEDEC standard 24-pin DIP package  Read and write access times of 100 ns  Full ±10% operating range  Optional industrial temperature range of -40°C to +85°C, designated IND NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM PIN ASSIGNMENT A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 24 VCC 23 A8 22 A9 21 WE 20 OE 19 A10 18 CE 17 DQ7 16 DQ6 15 DQ5 14 DQ4 13 DQ3 24-Pin ENCAPSULATED PACKAGE 720-mil EXTENDED PIN DESCRIPTION A0-A10 DQ0-DQ7 - Address Inputs - Data In/Data Out CE - Chip Enable WE - Write Enable OE VCC GND - Output Enable - Power (+5V) - Ground DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits.
Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCC for an out-of-tolerance condition.
When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.
The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard.
The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM, allowing direct substitution while enhancing performance.
There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
1 of 9 NOT RECOMMENDED FOR NEW DESIGNS READ MODE DS1220Y The DS1220Y executes a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip Enable) and OE (Output Enable) are active (low).
The unique address specified by the 11 address inputs (A0-A10) defines which of the 2048 ...


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