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PCGLA200T75NF8

ON Semiconductor
Part Number PCGLA200T75NF8
Manufacturer ON Semiconductor
Description 200A Field Stop Trench IGBT
Published Apr 1, 2020
Detailed Description DIE DATA SHEET www.onsemi.com Field Stop Trench IGBT Die 750 V, 200 A PCGLA200T75NF8 VCES = 750 V IC = Limited by Tj(m...
Datasheet PDF File PCGLA200T75NF8 PDF File

PCGLA200T75NF8
PCGLA200T75NF8

Overview
DIE DATA SHEET www.
onsemi.
com Field Stop Trench IGBT Die 750 V, 200 A PCGLA200T75NF8 VCES = 750 V IC = Limited by Tj(max) IGBT DIE Features • AEC−Q101 Rev.
D Qualified for Enhanced Reliability • Maximum Junction Temperature 175°C • Advanced FS4 Trench Technology • Positive Temperature Coefficient • Easy Paralleling • Short Circuit Rated • Very Low Saturation Voltage: VCE(SAT) = 1.
45 V(Typ.
) @ IC = 200 A • Optimized for Motor Control Applications Applications • Automotive Traction Modules • General Power Modules DIE OUTLINE MECHANICAL PARAMETERS Parameter Mils mm Die Size 394 x 394 10,000 x 10,000 Emitter Pad Size See chip drawing See chip drawing Gate Pad Size 47 x 56 1,200 x 1,430 Scribe Lane Width 3 80 Die Thickness 3.
4 86 Top Metal 5 mm AlSiCu Back Metal 1.
3 mm Al/NiV/Ag Topside Passivation Silicon Nitride plus Polyimide Wafer Diameter 200 mm Max Possible Die Per Wafer 226 Recommended Storage Environment In original container, in dry nitrogen, < 3 ...


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