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ISL9V3040D3ST-F085C

ON Semiconductor
Part Number ISL9V3040D3ST-F085C
Manufacturer ON Semiconductor
Description N-Channel IGBT
Published Apr 1, 2020
Detailed Description ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT ISL9V3040x3ST-F085C Features • SCIS Energy = 300 mJ at...
Datasheet PDF File ISL9V3040D3ST-F085C PDF File

ISL9V3040D3ST-F085C
ISL9V3040D3ST-F085C


Overview
ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT ISL9V3040x3ST-F085C Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse 24 V Battery Condition (IC = 10 mA) ESCIS25 ISCIS = 14.
2 A, L = 3.
0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ESCIS150 ISCIS = 10.
6 A, L = 3.
0 mHy, RGE = 1 KW, TC = 150°C (Note 2) IC25 Collector Current Continuous at VGE = 4.
0 V, TC = 25°C IC110 Collector Current Continuous at VGE = 4.
0 V, TC = 110°C VGEM Gate to Emitter Voltage Continuous 300 mJ 170 mJ 21 A 17 A ±10 V PD Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C TJ, TSTG Operating Junction and Storage Temperature 150 1 −55 to +175 W W/°C °C TL Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 300 °C TPKG Reflow Soldering according to JESD020C 260 °C ESD HBM−Electrostatic Discharge Voltage 4 kV at 100 pF, 1500 W CDM−Electrostatic Discharge Voltage 2 kV at 1 W Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.
2 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2.
Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.
6 A, VCC = 100 V during inductor charging and VCC = 0 V during time ...


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