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FGD2736G3-F085

ON Semiconductor
Part Number FGD2736G3-F085
Manufacturer ON Semiconductor
Description N-Channel IGBT
Published Apr 1, 2020
Detailed Description FGD2736G3-F085 EcoSPARKTM 270mJ, 360V, N-Channel Ignition IGBT FGD2736G3-F085 EcoSPARKTM 3 270mJ, 360V, N-Channel Ignit...
Datasheet PDF File FGD2736G3-F085 PDF File

FGD2736G3-F085
FGD2736G3-F085

Overview
FGD2736G3-F085 EcoSPARKTM 270mJ, 360V, N-Channel Ignition IGBT FGD2736G3-F085 EcoSPARKTM 3 270mJ, 360V, N-Channel Ignition IGBT Features  SCIS Energy = 270mJ at TJ= 25°C  SCIS Energy = 170mJ at TJ = 150°C  Logic Level Gate Drive  RoHS Compliant Applications  Automotive Ignition Coil Driver Circuits  Coil On Plug Applications Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER BVECS ESCIS25 Collector to Emitter Breakdown Voltage (IC = 1mA) Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) ISCIS = 13.
4A, L = 3.
0mHy, RGE = 1K TC = 25°C ESCIS150 ISCIS = 10.
8A, L = 3.
0mHy, RGE = 1K TC = 150°C IC25 IC110 VGEM Collector Current Continuous, at TC = 25°C, VGE = 5.
0V Collector Current Continuous, at TC = 110°C, VGE = 5.
0V Gate to Emitter Voltage Continuous PD TJ TSTG Power Dissipation Total Power Dissipation Derating Operating Junction Temperature Range Storage Junction Temperature Range TC = 25°C TC > 25°C TL TPKG ESD Max.
Lead Temp.
for Soldering (Leads at 1.
6mm from case for 10s) Max Lead Temp for soldering (Package Body for 10s) Electrostatic Discharge Voltage at100pF, 1500 Ratings 360 28 270 170 21 18 ±10 150 1 -40 to +175 -40 to +175 300 260 4 Units V V mJ mJ A A V W W/oC oC oC oC oC kV ©2017 Semiconductor Components Industries, LLC.
August-2017, Rev.
2 Publication Order Number: FGD2736G3-F085/D FGD2736G3-F085 EcoSPARKTM 270mJ, 360V, N-Channel Ignition IGBT Thermal Characteristics RJC Thermal Resistance Junction to Case 1 oC/W Electrical Characteristics of the IGBT TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVCER BVCES BVECS BVGES ICER IECS R1 R2 VGE = 0V,ICE = 2mA, Collector to Emitter Breakdown Voltage RGE TJ = = 1K, -40 to 150oC VGE = 0V, ICE = 10mA, Collector to Emitter Breakdown Voltage RGE TJ = = 0, -40 to 150oC Emitter to Collector Breakdown Voltage VGE = 0V, ICE = -75mA, TJ = 25°C Gate to Emitter...


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