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FGD3050G2V

ON Semiconductor
Part Number FGD3050G2V
Manufacturer ON Semiconductor
Description N-Channel IGBT
Published Apr 1, 2020
Detailed Description FGD3050G2V EcoSPARK) 2 Ignition IGBT 300 mJ, 500 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25...
Datasheet PDF File FGD3050G2V PDF File

FGD3050G2V
FGD3050G2V

Overview
FGD3050G2V EcoSPARK) 2 Ignition IGBT 300 mJ, 500 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Device is Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER BVECS ESCIS25 Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) Self Clamping Inductive Switching Energy (Note 1) 500 20 300 V V mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 180 mJ IC25 IC110 VGEM PD TJ Collector Current Continuous at VGE = 4.
0 V, TC = 25°C Collector Current Continuous at VGE = 4.
0 V, TC = 110°C Gate to Emitter Voltage Continuous 32 27 ±10 Power Dissipation Total, TC = 25°C 150 Power Dissipation Derating, for TC > 25°C 1.
1 Operating Junction Temperature Range −40 to +175 A A V W W/°C °C TSTG TL Storage Junction Temperature Range Max.
Lead Temperature for Soldering (Leads at 1.
6 mm from case for 10 s) −40 to +175 300 °C °C TPKG Max.
Lead Temperature for Soldering (Package Body for 10 s) 260 °C ESD Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Self clamped inductive Switching Energy (ESCIS25) of 335 mJ is based on the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.
2 A, RGE = 1 kW, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2.
Self Clamped inductive Switching Energy (ESCIS150) of 180 mJ is based on the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 11 A, RGE = 1 kW, VCC = 100 V during inductor charging and VCC = 0 V durin...


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