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FGH75T65UPD

ON Semiconductor
Part Number FGH75T65UPD
Manufacturer ON Semiconductor
Description IGBT
Published Apr 1, 2020
Detailed Description IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD, FGH75T65UPD-F155 Description Using innovative field stop trench IGBT ...
Datasheet PDF File FGH75T65UPD PDF File

FGH75T65UPD
FGH75T65UPD

Overview
IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD, FGH75T65UPD-F155 Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essential.
Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.
65 V(Typ.
) @ IC = 75 A • 100% of Parts Tested ILM • High Input Impedance • Tightened Parameter Distribution • Short Circuit Ruggedness > 5 ms @ 25°C • These Devices are Pb−Free and are RoHS Compliant Applications • Solar Inverter, UPS, Digital Power Generator www.
onsemi.
com C G E E C G TO−247−3LD CASE 340CK FGH75T65UPD TO−247−3LD CASE 340CH FGH75T65UPD−F155 MARKING DIAGRAMS $Y&Z&3&K FGH75T65 UPD $Y &Z &3 &K FGH75T65UPD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015 1 April, 2020 − Rev.
3 Publication Order Number: FGH75T65UPD/D FGH75T65UPD, FGH75T65UPD−F155 ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 650 V VGES ±20 V ±25 V Collector Current TC = 25°C IC 150 A Collector Current TC = 100°C 75 A Pulsed Collector Current (Note 1) ICM 225 A Clamped Inductive Load Current (Note 2) TC = 25°C ILM 225 A Diode Forward Current TC = 25°C IF 75 A Diode Forward Current TC = 100°C 50 A Pulsed Diode Maximum Forward Current (Note 1) IFM 225 A Maximum Power Dissipation TC = 25°C PD 375 W Maximum Power Dissipation TC = 100°C 187 W Short Circuit Withstand Time TC = 25°C SCWT 5 m...


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