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NXH80B120H2Q0

ON Semiconductor
Part Number NXH80B120H2Q0
Manufacturer ON Semiconductor
Description Dual Boost Power Module
Published Apr 1, 2020
Detailed Description Si/SiC Hybrid Module – EliteSiC, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode, Q0 Package NXH80B120H2Q0 The N...
Datasheet PDF File NXH80B120H2Q0 PDF File

NXH80B120H2Q0
NXH80B120H2Q0

Overview
Si/SiC Hybrid Module – EliteSiC, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode, Q0 Package NXH80B120H2Q0 The NXH80B120H2Q0 is a high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes including on−board thermistor.
Features • Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module • 1200 V FSII IGBT VCE(SAT) = 2.
2 V • 1200 V SiC Diode VF = 1.
4 V • Low Inductive Layout • Solderable Pins • Thermistor • Bare Copper and Nickel−Plated DBC Options Typical Applications • Solar Inverter • Uninterruptible Power Supplies • Energy Storage Systems 7, 8 D5 Bypass Diode 5,6,15,16 D3 Boost Diode D6 Bypass Diode D4 Boost Diode 13,14 9,10 1...


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