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FGAF30S65AQ

Part Number	FGAF30S65AQ
Manufacturer	ON Semiconductor
Description	IGBT
Published	Apr 1, 2020
Detailed Description	Field Stop Trench IGBT, 30 A, 650 V FGAF30S65AQ Using novel field stop IGBT technology, ON Semiconductor’s new series ...
Datasheet	FGAF30S65AQ PDF File

Overview

Field Stop Trench IGBT, 30 A, 650 V FGAF30S65AQ Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction and switching losses are essential.
Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.
4 V (Typ.
) @ IC = 30 A • 100% of the Parts Tested for ILM (Note 1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • IGBT with Monolithic Reverse Conducting Diode • This Device is Pb−Free and is RoHS Compliant Ty...

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FGAF30S65AQ IGBT - ON Semiconductor

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