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STGB30V60F

STMicroelectronics
Part Number STGB30V60F
Manufacturer STMicroelectronics
Description Trench gate field-stop IGBT
Published Apr 3, 2020
Detailed Description STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TA...
Datasheet PDF File STGB30V60F PDF File

STGB30V60F
STGB30V60F

Overview
STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB 3 1 D2PAK TAB 3 2 1 TO-220 Figure 1.
Internal schematic diagram C (2, TAB) Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.
85 V (typ.
) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters G (1) E (3) Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure.
The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Order codes STGB30V60F S...


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