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S99-50214

Part Number	S99-50214
Manufacturer	Cypress Semiconductor
Description	512-Mbit (32M x 16-bit) 1.8V Flash Memory
Published	Apr 10, 2020
Detailed Description	PRELIMINARY S99-50214 512 Mbit (32M x 16 bit) 1.8 V MirrorBit® Flash Features  Single 1.8 V read/program/erase  90 ...
Datasheet	S99-50214 PDF File

Overview

PRELIMINARY S99-50214 512 Mbit (32M x 16 bit) 1.
8 V MirrorBit® Flash Features  Single 1.
8 V read/program/erase  90 nm MirrorBit® Technology  Simultaneous Read/Write operation with zero latency  Random page read access mode of 8 words with 20 ns intra page access time  32 Word / 64 Byte Write Buffer  Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively  Four 16 Kword sectors at both top and bottom of memory array  510/254/126 64 Kword sectors (WS512/256/128P)  Secured Silicon Sector region consisting of 128 words each for factory and 128 words for customer  Command set compatible with JEDEC (42.
4) standard  Hardware (WP#) protection of top and b...

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S99-50214 512-Mbit (32M x 16-bit) 1.8V Flash Memory - Cypress Semiconductor

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